Amplifiers – With semiconductor amplifying device – Including particular biasing arrangement
Reexamination Certificate
2006-08-15
2006-08-15
Nguyen, Khanh Van (Department: 2817)
Amplifiers
With semiconductor amplifying device
Including particular biasing arrangement
C330S285000, C330S311000
Reexamination Certificate
active
07091788
ABSTRACT:
An amplifier includes a Darlington transistor pair and a biasing network to increase bias currents in an input transistor.
REFERENCES:
patent: 4706038 (1987-11-01), Navidi et al.
patent: 4855625 (1989-08-01), Webb
patent: 5264806 (1993-11-01), Kobayashi
patent: 5548288 (1996-08-01), Lueng
patent: 5724004 (1998-03-01), Reif et al.
patent: 5859568 (1999-01-01), Le et al.
patent: 6392492 (2002-05-01), Yuan
patent: 6417734 (2002-07-01), Luo et al.
patent: 2002/0135423 (2002-09-01), Yamashita
patent: 2002/0186084 (2002-12-01), Liwinski
patent: 2003/0146790 (2003-08-01), Arell et al.
Boles, Timothy , “A Fully Monolithic HMIC Low Noise Amplifier”,Radio Frequency Integrated Circuits(RFIC)Symposium, (Jun. 1997), pp. 109-112.
Hodges, David A., “Darlington's Contributions to Transistor Circuit Design”,IEEE Transactions on Circuits and Systems—I: Fundamental Theory and Applications, vol. 46, No. 1,(Jan. 1999), pp. 102-104.
Trajkovic, Ljiljana , et al., “Replacing a Transistor with a Compound Transistor”,IEEE Transactions on Circuits and Systems, vol. 35, No. 9,(Sep. 1988), pp. 1139-1146.
Umeda, A Y., et al., “A Monolithic GaAs HBT Upconverter”,IEEE Microwave and Millimeter-Wave Monolithic Circuits and Symposium, (May 1990), pp. 77-80.
Copy of International Search Reportdated Apr. 4, 2004, PCT/US2004/038730, 8 Pages.
Copy of Written Opinion of the International Searching Authoritydated Apr. 4, 2005, PCT/S2004/038730, 5 Pages.
Rodwell, M. , et al., “33 GHz Monolitihic Cascode AIInAs/GaInAs Heterojunctions Bipolar Transistor Feedback Amplifier”,IEEE 1990 Bipolar Circuits and Technology Meeting, (Sep. 17, 1990),252-255.
Glass Kevin W.
Smith Malcolm H.
Intel Corporation
LeMoine Patent Services, PLLC
Nguyen Khanh Van
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