Bias scheme of program inhibit for random programming in a nand

Static information storage and retrieval – Floating gate – Particular connection

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Details

36518518, G11C 1134

Patent

active

057151946

ABSTRACT:
The present invention is a system and method which allows random programming and avoids the problem with band-to-band tunneling current discussed above. In particular, the present invention applies a predetermined voltage along the wordlines adjacent to the programming wordline. A method of programming in a Flash memory system includes providing a first wordline coupled with a first device desired to be programmed, the first wordline also coupled with a second device desired to be program inhibited; electrically isolating the second device; programming the first device; and programming a third device coupled with a second wordline, the second wordline not being adjacent to the first wordline.

REFERENCES:
patent: 5572464 (1996-11-01), Iwasa

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