Bias ECR plasma CVD apparatus comprising susceptor, clamp, and c

Details Bias ECR plasma CVD apparatus comprising susceptor, clamp, and c Bias ECR plasma CVD apparatus comprising susceptor, clamp, and c

1992-04-13

1993-10-19

Hearn, Brian E.

Coating apparatus

Gas or vapor deposition

With treating means

118724, 118725, 118728, C23C 1600, C23C 1650

Patent

active

052541711

ABSTRACT:
A bias ECR plasma CVD apparatus includes an ECR plasma generating chamber and a plasma CVD chamber for forming a film on a substrate by a plasma CVD reaction. A heating device and a cooling device are provided at least in the vicinity of the substrate for maintaining the substrate and the vicinity thereof at a constant temperature. With this construction, the number of contaminant particles deposited on a surface of the substrate in forming the film on the substrate can be reduced.

REFERENCES:
patent: 4902934 (1990-02-01), Miyamura et al.
patent: 5078851 (1992-01-01), Nishihata et al.
patent: 5085750 (1992-02-01), Soraoka et al.
patent: 5091208 (1992-02-01), Pryor

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