Bias control for transistor circuits incorporating substrate bia

Details Bias control for transistor circuits incorporating substrate bia Bias control for transistor circuits incorporating substrate bia

1979-08-09

1981-12-22

Anagnos, Larry N.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307304, 307568, H03L 100, H03K 3353, H03K 1714

Patent

active

043073077

ABSTRACT:
Control circuitry for sensing excessive substrate bias voltage in a circuit, such as an LSI N-channel MOS transistor circuit incorporating a substrate bias generator, and for maintaining an optimum bias voltage level by bypassing the excess to ground.

REFERENCES:
patent: 3794862 (1974-02-01), Jenne
patent: 3806741 (1974-04-01), Smith
patent: 4049980 (1977-09-01), Maitland
patent: 4115710 (1978-09-01), Lou
patent: 4142114 (1979-02-01), Green
patent: 4208595 (1980-06-01), Gladstein et al.
patent: 4229667 (1980-10-01), Heimbigner et al.
Frantz, "Threshold Voltage Control Forn-Channel MOSFET Devices"; _ IBM Tech. Discl. Bull.; vol. 12, No. 12, p. 2078; 5/1970.
Hummel, "Sentry Circuit for Substrate Voltage Control"; IBM Tech. Discl. Bull.; vol. 15, No. 2, pp. 478-479, 7/1972.
Chang, "FET N-Channel Threshold Voltage-Control Circuit"; IBM Tech. Discl. Bull.; vol. 17, No. 1, p. 140; 6/1974.

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