Bias control circuitry for semiconductor bridge

Details Bias control circuitry for semiconductor bridge Bias control circuitry for semiconductor bridge

1974-12-27

1976-08-03

Miller, Jr., Stanley D.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307254, 307257, 323 75E, H03K 1700

Patent

active

039731430

ABSTRACT:
An electronic switch is disclosed comprising a transistor bridge having input and output signaling nodes and bias control nodes. A pair of matched current sources are selectively activated and deactivated in a series arrangement with symmetrical turn-on turn-off circuitry in response to a receipt of instruction signals. The instruction signals control the gating of a constant current to the turn-on/off circuitry for enabling the matched current sources to selectively apply and withdraw matched currents from bias control nodes. Switched turn-off circuitry is employed for reverse biasing the transistor bridge in response to a deactivation of the matched current sources. A pair of voltage reference and antisaturation circuits cooperate with bridge discharge circuits to effect the reverse biasing of the bridge and to discharge rapidly the effective electrical capacitance of that bridge shortly after the receipt of a bridge turn-off instruction.

REFERENCES:
patent: 3222547 (1965-12-01), Boan et al.
patent: 3700926 (1972-10-01), Dalley
patent: 3721829 (1973-03-01), Benson

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