Bias conditions for repair, program and erase operations of non-

Details Bias conditions for repair, program and erase operations of non- Bias conditions for repair, program and erase operations of non-

1999-07-06

2000-12-12

Elms, Richard

Static information storage and retrieval

Floating gate

Particular biasing

36518527, 36518529, 36518533, G11C 1604

Patent

active

061607371

ABSTRACT:
Bias conditions for improving the efficiency of repairing, programming and erasing the threshold voltages of non-volatile memory devices. A positive voltage is applied to the source region of a non-volatile memory cell. The control gate of the memory cell is applied with another positive voltage higher the voltage at the source region. The difference between the two voltages is proportional to the desired final threshold voltage. The drain region can be applied with a positive voltage directly from the power supply of the memory device. A negative voltage is applied to the bulk of the memory device so that a large electric field across the control gate and the bulk can induce hot-electron injection. By selecting the proper voltage level at the control gate, the method can be used for the repair, program or erase operation of memory devices.

REFERENCES:
patent: 5416738 (1995-05-01), Shrivastava
patent: 5687118 (1997-11-01), Chang
patent: 5742541 (1998-04-01), Tanigamai et al.
patent: 5894438 (1999-04-01), Yang et al.
patent: 5903494 (1999-05-01), Papadas et al.
patent: 5999011 (1999-12-01), Chu et al.
patent: 6005809 (1999-12-01), Sung et al.

Affiliated with

Also associated with

Rating

Bias conditions for repair, program and erase operations of non- does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Bias conditions for repair, program and erase operations of non-, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Bias conditions for repair, program and erase operations of non- will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-223596