Bias circuit for power amplifier operated by a low external...

Amplifiers – With semiconductor amplifying device – Including particular biasing arrangement

Reexamination Certificate

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Details

C330S289000

Reexamination Certificate

active

07400202

ABSTRACT:
A bias circuit includes a resistor in parallel with a voltage-drive bias circuit including a GaAs-HBT transistor. This configuration ensures that a current can be supplied from a reference voltage input terminal to the base terminal of a first transistor via the resistor in an idling state in which a voltage applied to the base terminal is lower than a voltage at which a second transistor operates, thereby enabling a desired amplifying operation while maintaining the idling current generally constant in a temperature range, even when the reference voltage is reduced to a value lower than twice the barrier voltage of the GaAs HBT.

REFERENCES:
patent: 6946913 (2005-09-01), Moriwaki et al.
patent: 7009453 (2006-03-01), Kuriyama
patent: 2004/0251967 (2004-12-01), Moriwaki et al.
patent: 1 515 434 (2005-03-01), None
patent: 2001-313531 (2001-11-01), None
patent: 2003-229728 (2003-08-01), None
patent: 2004-343244 (2004-12-01), None

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