Bias circuit for photodiode having level shift circuitry

Radiant energy – Photocells; circuits and apparatus – Photocell controlled circuit

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307311, 307491, G05F 500

Patent

active

053430344

ABSTRACT:
In order to reduce a change in reverse bias to a photodiode due to drift of a power supply caused by, e.g., noise, and to suppress generation of a wrong photoelectric current detection signal, a bias circuit includes a load element (4), a transistor (Q1) for receiving a current from the load element (4) at its collector, a transistor (Q2) constituting a current mirror circuit together with the transistor (Q1), a level shift circuit connected between the base of an output transistor (Q3) of the current mirror circuit and the collector of the transistor (Q1), and constituted by transistors (Q4-Q7) and load elements (R1-R4), and a photodiode (1) connected to a desired potential node of the level shift circuit.

REFERENCES:
patent: 3828241 (1974-08-01), Horichi
patent: 3911268 (1975-10-01), Mori et al.
patent: 4467192 (1984-08-01), Velo
patent: 4730128 (1988-03-01), Seki
patent: 4759081 (1988-07-01), Witters
patent: 4797546 (1989-01-01), Berger et al.
patent: 4945227 (1990-07-01), Jones et al.
patent: 5270533 (1993-12-01), Pulice
"High Frequency Gallium Arsenide Current Mirror" by Stevenage, Electronics Letter; vol. 26, No. 21, Oct. 11, 1990 p. 1802.
"Integrated Current Source With High Power Supply Noise Rejection"; by Y. Bonnet and M. Verhaeghe; IBM Technical Disclosure Bulletin; vol. 23, No. 2, Jul. 1980, New York, US; pp. 639-640.

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