Bias circuit for BJT amplifier

Amplifiers – With semiconductor amplifying device – Including gain control means

Reexamination Certificate

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C330S296000

Reexamination Certificate

active

07345547

ABSTRACT:
The embodiments of the present invention include a bias circuit for a power-amplifying device, which receives and amplifies an input RF signal having a series of RF cycles within a modulation envelop. The bias circuit compensates odd-order distortion processes by detecting the power in the input signal and providing a dynamic adjustment to a bias stimulus for the power-amplifying device within a time scale of the modulation envelope.

REFERENCES:
patent: 1850187 (1932-03-01), Thewes
patent: 2114971 (1938-04-01), Segeler
patent: 2107910 (1938-08-01), Schumacher
patent: 5590411 (1996-12-01), Sroka et al.
patent: 5710523 (1998-01-01), Kobayashi
patent: 5850187 (1998-12-01), Carrender et al.
patent: 6107910 (2000-08-01), Nysen
patent: 6114971 (2000-09-01), Nysen
patent: 6275687 (2001-08-01), Lloyd
patent: 6300837 (2001-10-01), Sowlati et al.
patent: 6333677 (2001-12-01), Dening
patent: 6486739 (2002-11-01), Luo
patent: 6529080 (2003-03-01), Seymour et al.
patent: 7154336 (2006-12-01), Maeda
Chen, Shiao-Shien, et al. “Investigation of ESD Devices in 0.18-μm SiGE BiCMOS Process,” IEEE 03CH37400 41st Annual International Reliability Physics Symposium, Dallas, Texas (2003) pp. 357-360.
Dunn, J., et al., “Trends in silicon Germanium BiCMOS Integration and Reliability,” IEEE 00CH37059, 38th Annual International Reliability Physics Symposium, San Jose, CA (2000) pp. 237-242.
Iwai, Taisuke, et al., “42% High-Efficiency Two-Stage HBT Power-Amplifier MMIC for W-CDMA Cellular Phone Systems,” IEEE Transactions on Microwave Theory and Techniques, vol. 48, No. 12, (Dec. 2000) pp. 2567-2572.
Kawamura, H., et al., “A Miniature 44% Efficiency GaAs HBT Power Amplifier MMIC for the W-CDMA Application”, IEEE GaAs Digest (2000) pp. 25-28.
Jeon, Yong-Joon, et al., “Improved HBT Linearity With a ‘Post Distortion’-Type Collector Linearizer,” IEEE Microwave and Wireless Components Letters, vol. 13, No. 3, (Mar. 2003) pp. 102-104.
Kang, Sanghoon, et al., “Linearity Analysis of CMOS for RF Application,” IEEE Radio Frequency Integrated Circuits Symposium, (2002), pp. 363-366.
Kim, Hye-Ryoung, et al., “A 5-GHz LNA for Wireless LAN Application Based on 0.5μm SiGe BiCMOS,” 3rd International Conference on Microwave and Millimeter Wave Technology Proceedings, IEEE (2005) pp. 50-53.
Kim, Joon H., et al., “High Linear HBT MMIC Power amplifier with Partial RF Coupling to Bias Circuit for W-CDMA Portable Application,” 3rd International Conference on Microwave and Millimeter Wave Technology Proceedings, IEEE (2005) pp. 809-812.
Ko, Jin-Su, et al., “Effect of Bias Scheme on Intermodulation Distortion and its Use for the Design of PCS Tx Driver,” IEEE Radio Frequency Integrated Circuits Symposium, (2000) pp. 105-105.
Noh, Youn Sub, et al., “PCS/W-CDMA Dual-Band MMIC Power Amplifier With a Newly Proposed Linearizing Bias Circuit,” IEEE Journal of Solid-State Circuits, vol. 37, No. 9, (Sep. 2002) pp. 1096-1099.
Taniguchi, Eiji, et al., “Dual Bias Feed SiGe HBT Low Noise Linear Amplifier,” IEEE Radio Frequency Integrated Circuits Symposium, (2001) pp. 227-230.
Trask, Chris, “High Efficiency Broadband Linear Push-Pull Power Amplifiers Using Linearity Augmentation,” IEEE International Symposium on Circuits and Systems, (2002) pp. II432-II435.
Voldman, Steven H., et al., “The Influence of Process and Design of Subcollectors on the ESD Robustness of ESD Structures and Silicon Germanium Heterojunction Bipolar Transistors in a BiCMOS SiGE Technology,” IEEE 03CH37400, 41st Annual International Reliability Physics Symposium, Dallas, Texas (2003) pp. 347-356.
Voldman, Steven H., et al., “Silicon Germanium Heterojunction Bipolar Transistor Electrostatic Discharge Power Clamps and the Johnson Limit in RF BiCMOS SiGE Technology,” Elsevier Science, Journal of Electrostatics, vol. 56, (2002) pp. 341-362.
Voldman, Steven H., “The State of the Art of Electrostatic Discharge Protection” Physics, Technology, Circuits, Design, Simulation, and Scaling, IEEE Journal of Solid-State Circuits, vol. 34, No. 9 (1999) pp. 1272-1282.
Wang, Albert, “Recent Developments in ESD Protection for RFIC's,” IEEE (2003) pp. 171-178.
Yoshimasu, Tosjijiko, et al., “An HBT MMIC Power Amplifier with an Integrated Diode Linearizer for Low-Voltage Portable Phone Applications,” IEEE Journal of solid-State Circuits, vol. 33, No. 9, (Sep. 1998) pp. 1290-1296.

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