Bias circuit for a MOS device

Miscellaneous active electrical nonlinear devices – circuits – and – Specific identifiable device – circuit – or system – With specific source of supply or bias voltage

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

Reexamination Certificate

active

07936208

ABSTRACT:
A method and circuit for providing a bias voltage to a MOS device is disclosed. The method and circuit comprise utilizing at least one diode connected circuit to provide a voltage that tracks process, voltage and temperature variations of a semiconductor device. The method and circuit includes utilizing a current mirror circuit coupled to the at least one diode connected circuit to generate a bias voltage for the body of the semiconductor device from the voltage. The bias voltage allows for compensation for the process, voltage and temperature variations.

REFERENCES:
patent: 5034626 (1991-07-01), Pirez et al.
patent: 5109187 (1992-04-01), Guliani
patent: 5394026 (1995-02-01), Yu et al.
patent: 5675280 (1997-10-01), Nomura et al.
patent: 5777509 (1998-07-01), Gasparik
patent: 5903012 (1999-05-01), Boerstler
patent: 7106129 (2006-09-01), Nakai
patent: 7327126 (2008-02-01), Yoshihara
patent: 2003/0227322 (2003-12-01), Ozoe
patent: 2006/0226889 (2006-10-01), Gupta et al.
patent: 2007/0030049 (2007-02-01), Yoshikawa
Koichiro Ishibashi, ‘Adaptive Body Bias Techniques for Low Power SOC’, Renesas Technology Corp., Semiconductor Technology Academic Research Center (STARC); 2007 IEEE International Solid-State Circuits Conference.
Koichiro Ishibashi, ‘Adaptive Body Bias Techniques for Low Power SOC’, Renesas Technology Corp., Semiconductor Technology Academic Research Center (STARC); 2007 IEEE International Solid-State Circuits Conference.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Bias circuit for a MOS device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Bias circuit for a MOS device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Bias circuit for a MOS device will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2633339

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.