Bias circuit and semiconductor device

Details Bias circuit and semiconductor device Bias circuit and semiconductor device

2005-01-11

2005-01-11

Zweizig, Jeffrey (Department: 2816)

Miscellaneous active electrical nonlinear devices, circuits, and

Specific identifiable device, circuit, or system

With specific source of supply or bias voltage

Reexamination Certificate

active

06842066

ABSTRACT:
A bias circuit which supplies a bias voltage to a first transistor comprises a second transistor formed on a same semiconductor substrate as the first transistor and having a control electrode and a first and a second main electrodes; a resistance circuit; and a first and a second level shifters. The second transistor is either a metal semiconductor field effect transistor or a high electron mobility transistor. One end of the resistance circuit is connected to a voltage supply, other end of the resistance circuit is connected to the first main electrode of the second transistor, the control electrode of the second transistor is connected to the second main electrode of the second transistor, the second main electrode of the second transistor is connected to a common voltage. A voltage at the first main electrode of the second transistor is divided by the first and second level shifters and the divided voltage is outputted as the bias voltage.

REFERENCES:
patent: 4485313 (1984-11-01), Nagano
patent: 5359327 (1994-10-01), Brown et al.
patent: 5587655 (1996-12-01), Oyabe et al.
patent: 5903141 (1999-05-01), Tailliet
patent: 6392469 (2002-05-01), Padoan et al.
patent: 5-276015 (1993-10-01), None
patent: 6-132734 (1994-05-01), None
patent: 2001-358543 (2001-12-01), None

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