Bias circuit and method of producing semiconductor device

Details Bias circuit and method of producing semiconductor device Bias circuit and method of producing semiconductor device

2008-01-22

2008-01-22

Wells, Kenneth B. (Department: 2816)

Miscellaneous active electrical nonlinear devices, circuits, and

Signal converting, shaping, or generating

Amplitude control

C327S430000, C330S296000

Reexamination Certificate

active

07321251

ABSTRACT:
A bias circuit able to keep a bias current constant even if a threshold voltage of a transistor changes, provided with a resistance element connected between a bias voltage supply line and a gate and changing in resistance value linked with the threshold value of the transistor. Even if the threshold value of the transistor changes, the resistance value changes in response to the change of the threshold value. When the threshold voltage increases, the resistance value decreases and the bias voltage is adjusted by resistance division to increase. When the threshold voltage decreases, the resistance value increases and the bias voltage is adjusted by resistance division to decrease. The transistor is a junction type transistor having a first conductivity type channel and a second conductivity type gate. The resistance element is formed in the second conductivity type semiconductor region.

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patent: 09-283710 (1997-10-01), None

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