Bi-MOS type semiconductor integrated circuit device having high-

Details Bi-MOS type semiconductor integrated circuit device having high- Bi-MOS type semiconductor integrated circuit device having high-

1992-06-25

1993-08-24

Wojciechowicz, Edward

Fishing, trapping, and vermin destroying

437 20, 437 63, 437162, 437192, 437193, 437233, 437235, 437248, 257378, 257382, H01L 21265, H01L 2702

Patent

active

052388506

ABSTRACT:
A Bi-MOS type semiconductor integrated circuit device having at least one bipolar transistor in an island region is provided. The island region is covered with a multilayer insulating film which is formed of a silicon oxide film and a silicon nitride film having a different etching resistance with each other. Collector and base contact holes and an intended emitter contact hole are formed in the multilayer insulating film at the same time to provide bipolar transistors having a fine structure. An insulated gate MOS transistor includes a protective film such as polysilicon film covering a gate insulating film to increase the reliability.

REFERENCES:
patent: 4978626 (1990-12-01), Poon et al.
patent: 4984042 (1991-01-01), Pfiester et al.
patent: 5023690 (1991-06-01), Verret et al.
patent: 5148252 (1992-09-01), Taka

Affiliated with

Also associated with

Rating

Bi-MOS type semiconductor integrated circuit device having high- does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Bi-MOS type semiconductor integrated circuit device having high-, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Bi-MOS type semiconductor integrated circuit device having high- will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-828542