Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2007-02-26
2008-09-09
Lam, Cathy (Department: 1794)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S755000, C257S756000
Reexamination Certificate
active
07423344
ABSTRACT:
A method of forming a film stack in an integrated circuit, said method comprising depositing a layer of silicon carbide adjacent a first layer of dielectric material, depositing a layer of silicon nitride adjacent the layer of silicon carbide, and depositing a second layer of dielectric material adjacent the layer of silicon nitride.
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Fischer August J.
Kim Tae S.
Kruse Nathan J.
Willecke Ralf B.
Zhao Jin
Brady III Wade James
Lam Cathy
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
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