Active solid-state devices (e.g. – transistors – solid-state diode – With specified dopant
Reexamination Certificate
2011-08-02
2011-08-02
Trinh, Hoa B (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
With specified dopant
C257S606000, C257SE29215
Reexamination Certificate
active
07989923
ABSTRACT:
A bidirectional transient voltage suppression device is disclosed. The bi-directional transient voltage suppression device comprises a semiconductor die. The semiconductor die has a multi-layer structure comprising a semiconductor substrate of a first conductivity type, a buried layer of a second conductivity type, an epitaxial layer, and five diffused regions. The buried layer and the semiconductor substrate form a first semiconductor junction. The first diffused region of the second conductivity type and the semiconductor substrate form a second semiconductor junction. The fourth diffused region of the first conductivity type and the third diffused region of the second conductivity type form a third semiconductor junction. The fifth diffused region of the first conductivity type and the second diffused region of the second conductivity type form a fourth semiconductor junction.
REFERENCES:
patent: 3971059 (1976-07-01), Dunkley et al.
patent: 6590273 (2003-07-01), Okawa et al.
patent: 7361942 (2008-04-01), Matteson et al.
Jiang Hsin-Chin
Lin Kun-Hsien
Tseng Tang-Kuei
Amazing Microelectronic Corp.
Morris Manning & Martin LLP
Tingkang Xia Tim
Trinh Hoa B
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