Bi-directional silicon controlled rectifier structure with...

Details Bi-directional silicon controlled rectifier structure with... Bi-directional silicon controlled rectifier structure with...

2005-11-01

2005-11-01

Thomas, Tom (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Device protection

C257S111000, C257S162000, C257S168000, C257S355000, C257S356000, C257S357000, C257S546000

Reexamination Certificate

active

06960792

ABSTRACT:
A bi-directional silicon controlled rectifier structure provides electrostatic discharge (ESD) protection against both positive and negative voltage spikes. The structure utilizes a pair of wells, n+ and p+ regions formed in both wells, a first ring formed around the junction between the first well and the semiconductor material, and a second ring formed around the junction between the second well and the semiconductor material.

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