Semiconductor device manufacturing: process – Packaging or treatment of packaged semiconductor – Assembly of plural semiconductive substrates each possessing...
Reexamination Certificate
2005-11-15
2005-11-15
Graybill, David E. (Department: 2822)
Semiconductor device manufacturing: process
Packaging or treatment of packaged semiconductor
Assembly of plural semiconductive substrates each possessing...
C438S134000, C438S200000, C438S219000
Reexamination Certificate
active
06964883
ABSTRACT:
A bi-directional silicon controlled rectifier formed in a silicon layer and disposed over shallow trench isolations and therefore electrically isolated from the substrate to be insensitive to substrate noise for electrostatic discharge protection an electrostatic discharge protection device that includes a semiconductor substrate, including a first p-type portion, a first n-type portion contiguous with the first p-type portion, a second p-type portion contiguous with the first p-type portion and the first n-type portion, a second n-type portion, a third p-type portion, a third n-type portion contiguous with the third p-type portion, and a fourth p-type portion contiguous with the third p-type portion and the third n-type portion, wherein at least one of the first p-type portion, second p-type portion, third p-type portion, fourth p-type portion, first n-type portion, second n-type portion, and third n-type portion overlaps the isolation structure.
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Finnegan Henderson Farabow Garrett & Dunner L.L.P.
Graybill David E.
Industrial Technology Research Institute
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