Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Having only two terminals and no control electrode – e.g.,...
Reexamination Certificate
2008-01-15
2010-12-28
Mai, Anh D (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Having only two terminals and no control electrode , e.g.,...
C257S104000, C257S173000, C257SE29215
Reexamination Certificate
active
07859010
ABSTRACT:
A semiconductor substrate has a second conductivity type cathode layer formed thereon. The cathode layer has a first conductivity type base layer formed thereon. A first anode region of the second conductivity type is formed in the surface of the base layer. A second anode region of the first conductivity type is formed in the first anode region. A first semiconductor region of the first conductivity type is formed in contact with the semiconductor substrate. A second semiconductor region of the second conductivity type is formed adjacent to the first semiconductor region and in contact with the cathode layer. An intermediate electrode is formed on the surfaces of the first semiconductor region and the contact region.
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Kabushiki Kaisha Toshiba
Mai Anh D
Turocy & Watson LLP
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