Bi-directional HEMT/GaN half-bridge circuit

Details Bi-directional HEMT/GaN half-bridge circuit Bi-directional HEMT/GaN half-bridge circuit

2011-06-14

2011-06-14

Patel, Rajnikant B (Department: 2838)

Electric power conversion systems

Current conversion

Including d.c.-a.c.-d.c. converter

C315S291000, C323S274000

Reexamination Certificate

active

07961482

ABSTRACT:
A half-bridge circuit in accordance with an embodiment of the present application includes an input voltage terminal operable to receive an input voltage, a first bi-directional switch, a second bi-directional switch connected in series with the first bi-directional switch, wherein the first and second bi-directional switches are connected to the input voltage terminal such that the input voltage is provided across the first and second bi-directional switches and a controller operable to turn the first and second bi-directional switches ON and OFF such that a desired voltage is provided at an midpoint node positioned between the first bi-directional switch and the second bi-directional switch. The first bi-directional switch and the second bi-directional switch are high electron mobility transistors structured to allow for conduction in two directions when ON and to prevent conduction in any direction when OFF.

REFERENCES:
patent: 7298123 (2007-11-01), Watanabe et al.

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