Bi-CMOS logic circuit

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

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307451, 307455, 307570, H03K 1902, H03K 1908

Patent

active

051626730

ABSTRACT:
A Bi-CMOS circuit includes a bipolar transistor, a first-conductive-type MOSFET, and first and second second-conductive-type MOSFETs. The bipolar transistor is connected at a base to an input terminal to which an input potential is applied and at an emitter to an output terminal at which an output potential is obtained. The bipolar transistor and the second MOSFET are connected serially. The second MOSFET becomes ON to discharge the output terminal only if the input potential is low level, so that the power consumption of the Bi-CMOS circuit is reduced.

REFERENCES:
patent: 4558234 (1985-12-01), Suzuki et al.
patent: 4791320 (1988-12-01), Kawata et al.
patent: 4798983 (1989-01-01), Mori
patent: 4882534 (1989-11-01), Koshizuka
patent: 5113096 (1992-05-01), Lev et al.

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