BI-CMOS gate array semiconductor integrated circuits and interna

Active solid-state devices (e.g. – transistors – solid-state diode – Gate arrays – Having specific type of active device

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Details

257204, 257206, 257370, H01L 2710, H01L 2976

Patent

active

054970148

ABSTRACT:
The invention provides a Bi-CMOS gate array semiconductor integrated circuit chip including a peripheral region including an input/output circuit region and a bonding pad region and an internal cell structure provided within an internal cell region involved in the semiconductor integrated circuit chip. The internal cell structure comprises MOS transistor cell units including a plurality of MOS transistors and bipolar transistor cell units including a plurality of bipolar transistors wherein a distribution ratio in the number of the MOS transistor cell units to the bipolar transistor cell units has such a variation that the distributed ratio is high in a region that requires driving of almost no or a small load while the distributed ratio is low in a region that requires driving of a large load.

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