Bi-CMOS circuit

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

Patent

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Details

307443, 307570, H03K 1901

Patent

active

051773775

ABSTRACT:
A Bi-CMOS circuit includes a bipolar output stage and a CMOS circuit. The bipolar output stage includes pull-up and pull-down transistors which form an output end. The CMOS circuit receives an input signal and generates a signal for driving the output stage. The CMOS circuit comprises a CMOS inverter for receiving the input signal, a p-channel MOS transistor for driving the pull-up transistor of the bipolar output stage based on the input signal, an n-channel MOS transistor for driving the pull-down transistors of the bipolar output stage based on the input signal, a p-channel MOS transistor for discharging a base of the pull-up transistor based on an output of the CMOS inverter, and an n-channel MOS transistor for discharging a base of the pull-down transistor based on an output of the CMOS inverter.

REFERENCES:
patent: 4301383 (1981-11-01), Taylor
patent: 4883979 (1989-11-01), Tran
patent: 4902914 (1990-02-01), Masuoka
patent: 4970414 (1990-11-01), Ruth, Jr.
patent: 4985645 (1991-01-01), Tsutsui
patent: 5013936 (1991-05-01), Shiomi et al.

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