Bi-CMOS circuit

Details Bi-CMOS circuit Bi-CMOS circuit

1995-04-17

1997-08-26

Callahan, Timothy P.

Miscellaneous active electrical nonlinear devices, circuits, and

Gating

Signal transmission integrity or spurious noise override

327384, 327433, 327 84, 327110, H03K 1902, H03K 1760, H03K 1716

Patent

active

056614292

ABSTRACT:
A BiCMOS circuit includes a CMOS circuit for inverting data applied to an input terminal and a first bipolar transistor, having a base connected to an output point of this CMOS circuit, a collector connected to a power supply voltage and an emitter connected to an output terminal, for charging the output terminal. The BiCMOS circuit also includes a second bipolar transistor, having a collector connected to the output terminal, for discharging the output terminal, a first MOS transistor of a first conductivity type connected in parallel between the base and the collector of the second bipolar transistor and a second MOS transistor of the first conductivity type connected in series with the first MOS transistor and having a gate connected to an output point of the CMOS circuit. The Bi-CMOS circuit further includes a third MOS transistor of the first conductivity type connected between the input terminal and the gate of the first MOS transistor of the first conductivity type and having a gate receiving a first reference voltage, and a fourth MOS transistor of a second conductivity type connected between the first reference voltage and the gate of the first MOS transistor. A large variation width of an output voltage can be ensured, and hence the Bi-CMOS circuit normally operates even at a low voltage without any deterioration in terms of delay time.

REFERENCES:
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patent: 5182472 (1993-01-01), Ando
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patent: 5254885 (1993-10-01), Ando
patent: 5365124 (1994-11-01), Seta et al.

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