BeTe-ZnSe graded band gap ohmic contact to p-type ZnSe semicondu

Details BeTe-ZnSe graded band gap ohmic contact to p-type ZnSe semicondu BeTe-ZnSe graded band gap ohmic contact to p-type ZnSe semicondu

1993-07-02

1995-06-06

Bovernick, Rodney B.

Coherent light generators

Particular active media

Semiconductor

372 44, 372 45, 372 46, 257200, 257201, H01S 319, H01L 3300

Patent

active

054229022

ABSTRACT:
The present invention relates to semiconductor devices with ohmic contact to ZnSe-based layers and lasers derived therefrom wherein BeTe is used in a graded band gap layer. Preferably, an ohmic contact layer of BeTe-containing graded composition is used which consists essentially of Be.sub.x Zn.sub.1-x Te.sub.x Se.sub.1-x wherein x is within the range of 0 and 1 selected so as to provide substantial lattice matching to the lattice structure c the substrate. Specifically, Be.sub.x Zn.sub.1-x Te.sub.x Se.sub.1-x graded gap semiconductor layers are provided for application as ohmic contacts to p-type ZnSe, ZnS.sub.x Se.sub.1-x, Zn.sub.1-x Cd.sub.x S, Zn.sub.1-x Cd.sub.x S.sub.y Se.sub.1-y, Zn.sub.1-x Mg.sub.x S.sub.y Se.sub.1-y (wherein x and y are a number selected from 0 to 1) and other II-VI compound semiconductors used in lasers grown on GaAs substrates. Due to the close lattice match to GaAs substrate, graded (BeTe).sub.x (ZnSe).sub.1-x contact allow for the entire device structure to be grown within the pseudomorphic limit.

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