Electrical generator or motor structure – Non-dynamoelectric – Nuclear reaction
Reexamination Certificate
2006-08-24
2010-02-16
Dougherty, Thomas M (Department: 2837)
Electrical generator or motor structure
Non-dynamoelectric
Nuclear reaction
Reexamination Certificate
active
07663288
ABSTRACT:
High aspect ratio micromachined structures in semiconductors are used to improve power density in Betavoltaic cells by providing large surface areas in a small volume. A radioactive beta-emitting material may be placed within gaps between the structures to provide fuel for a cell. The pillars may be formed of SiC. In one embodiment, SiC pillars are formed of n-type SiC. P type dopant, such as boron is obtained by annealing a borosilicate glass boron source formed on the SiC. The glass is then removed. In further embodiments, a dopant may be implanted, coated by glass, and then annealed. The doping results in shallow planar junctions in SiC.
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Chandrashekhar, M. V., et al., “Demonstration of a 4H SiC Betavoltaic Cell”,Applied Physics Letters, 88, 033506, (published on-line on Jan. 18, 2006),3 pgs.
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Chandrashekhar M V S
Spencer Michael G.
Thomas Christopher Ian
Cornell Research Foundation Inc.
Dougherty Thomas M
Schwegman Lundberg & Woessner, P.A.
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