Betavoltaic cell

Electrical generator or motor structure – Non-dynamoelectric – Nuclear reaction

Reexamination Certificate

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Reexamination Certificate

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07663288

ABSTRACT:
High aspect ratio micromachined structures in semiconductors are used to improve power density in Betavoltaic cells by providing large surface areas in a small volume. A radioactive beta-emitting material may be placed within gaps between the structures to provide fuel for a cell. The pillars may be formed of SiC. In one embodiment, SiC pillars are formed of n-type SiC. P type dopant, such as boron is obtained by annealing a borosilicate glass boron source formed on the SiC. The glass is then removed. In further embodiments, a dopant may be implanted, coated by glass, and then annealed. The doping results in shallow planar junctions in SiC.

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Chandrashekhar, M. V., et al., “Demonstration of a 4H SiC Betavoltaic Cell”,Applied Physics Letters, 88, 033506, (published on-line on Jan. 18, 2006),3 pgs.
Sun, W. , et al., “A Three-Dimensional Porous Silicon p-n Diode for Betavoltaics and Photovoltaics”,Advanced Materials, 17, (2005),1230-1235.

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