Beta dependent temperature sensor for an integrated circuit

Details Beta dependent temperature sensor for an integrated circuit Beta dependent temperature sensor for an integrated circuit

1996-12-23

2000-12-12

Chaudhuri, Olik

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

257467, H01L 31058, H01L 27082, H01L 27102, H01L 2970

Patent

active

061603058

ABSTRACT:
A thermal sensing element (10) incorporates a vertical pnp bipolar transistor (12) whose BETA is dependent on temperature. This known relationship can be used to build a temperature sensor (200, 300), that is inexpensive, reliable, and whose process variance is predictable.

REFERENCES:
patent: 4639755 (1987-01-01), Namiki et al.
patent: 5195827 (1993-03-01), Audy et al.
patent: 5451892 (1995-09-01), Bailey
patent: 5487127 (1996-01-01), Bertoluzzi et al.
patent: 5815358 (1998-09-01), Tihanyi
patent: 6046492 (2000-04-01), Machida et al.

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