Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2007-02-13
2007-02-13
Le, Thong Q. (Department: 2827)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185240, C365S185110
Reexamination Certificate
active
10689333
ABSTRACT:
The process for programming a set of memory cells is improved by adapting the programming process based on behavior of the memory cells. For example, a set of program pulses is applied to the word line for a set of flash memory cells. A determination is made as to which memory cells are easier to program and which memory cells are harder to program. Bit line voltages (or other parameters) can be adjusted based on the determination of which memory cells are easier to program and which memory cells are harder to program. The programming process will then continue with the adjusted bit line voltages (or other parameters).
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Chen Jian
Guterman Daniel C.
Li Yan
Lutze Jeffrey W.
Tanaka Tomoharu
Le Thong Q.
Sandisk Corporation
Vierra Magen Marcus & DeNiro LLP
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