Bean scanning and method of use for ion implantation

Details Bean scanning and method of use for ion implantation Bean scanning and method of use for ion implantation

1980-02-22

1981-08-11

Dixon, Harold A.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

250281, 250288, 250398, B01D 5944, A61K 2702

Patent

active

042836310

ABSTRACT:
In an ion implantation system, departure from uniform ion dosage of a planar workpiece is first compensated by modulating the scan rate of at least one coordinate of scan deflection in accordance with a non-linear waveform. The non-linear waveform is digitally synthesized from a plurality of contiguous linear segments, such segments having equal projection on the time axis. The pattern of two-dimensional scanning is then configured to correspond to an astable Lissajous figure. When the trace of such Lissajous figure returns to the initial origin of the pattern, the origin is then displaced by a fraction 1
of the interval between parallel traces of the basic Lissajous pattern and the displaced Lissajous pattern is executed and again displaced n times until the interval has been traversed. The number n is chosen with reference to scan amplitude and the lateral extension of the beam at the workpiece; a sufficient noise component is tolerated in the deflection system to dither the beam about the average scan trace in order to remove small pattern in homogeneities.

REFERENCES:
patent: 2414096 (1947-01-01), Dimond
patent: 2858434 (1958-10-01), Tollefson
patent: 2858441 (1958-10-01), Gale
patent: 3569757 (1971-03-01), Brewer
patent: 4144579 (1979-03-01), Nossen et al.

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