Beam stop and beam tuning methods

Details Beam stop and beam tuning methods Beam stop and beam tuning methods

2006-06-02

2009-08-25

Berman, Jack I (Department: 2881)

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

C250S492100, C250S3960ML, C250S397000, C250S400000, C250S492300, C250S398000, C250S251000, C250S492220, C250S3960ML, C427S523000, C204S298040, C200S252000

Reexamination Certificate

active

07579604

ABSTRACT:
A system, method, and apparatus for mitigating contamination associated with ion implantation are provided. An ion source, end station, and mass analyzer positioned between the ion source and the end station are provided, wherein an ion beam is formed from the ion source and selectively travels through the mass analyzer to the end station, based on a position of a beam stop assembly. The beam stop assembly selectively prevents the ion beam from entering and/or exiting the mass analyzer, therein minimizing contamination associated with an unstable ion source during transition periods such as a start-up of the ion implantation system.

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patent: 6661016 (2003-12-01), Berrian
patent: 2002/0053642 (2002-05-01), Berrian
patent: 1030344 (2000-08-01), None
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International Search Report for International Patent Application PCT/US06/021647; Mailing Date of Mar. 9, 2007, p. 1-6.
U.S. Appl. No. 11/455,667, filed Jun. 2, 2006, Berrian et al., Entire Document.
U.S. Appl. No. 11/445,677, filed Jun. 2, 2006, Vanderpot et al., Entire Document.

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