Beam space-charge compensation device and ion implantation...

Details Beam space-charge compensation device and ion implantation... Beam space-charge compensation device and ion implantation...

2007-10-02

2007-10-02

Nguyen, Kiet T. (Department: 2881)

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

C250S251000

Reexamination Certificate

active

11150273

ABSTRACT:
A beam space-charge compensation device is applied to an angular energy filter provided in an ion beam processing system that performs processing by irradiating onto a wafer with an ion beam. The beam space-charge compensation device comprises a plasma shower provided in a beam-guiding chamber of the angular energy filter. The plasma shower comprises an arc chamber having a filament for generating thermo-electrons for plasma. The arc chamber comprises an extraction hole for extracting the thermo-electrons. The plasma shower is arranged such that the extraction hole is located on lines of magnetic force, perpendicular to an ion beam advancing direction, of the magnetic field and that a center axis of the filament and a center axis of said extraction hole coincide with the lines of magnetic force, perpendicular to the ion beam advancing direction, of the magnetic field.

REFERENCES:
patent: 5668368 (1997-09-01), Sakai et al.
patent: 6313428 (2001-11-01), Chen et al.
patent: 6753539 (2004-06-01), Kawaguchi

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