Beam source for production of radicals and metastables

Details Beam source for production of radicals and metastables Beam source for production of radicals and metastables

1996-12-20

1998-10-13

Nguyen, Kiet T.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

2504922, 250423R, 31511181, H01J 4900

Patent

active

058215484

ABSTRACT:
Methods and apparatus for fabricating semiconductors by producing a corona discharge plasma comprising an intense beam of high-energy particles, supersonically expanding the plasma, and defining and directing the plasma toward a substrate, are disclosed. A discharge system including a corona discharge nozzle, a source body, a molecular beam skimmer, and a thin-film vacuum deposition chamber is used to deposit or modify a thin film on a substrate. A gas to be activated is supplied to the corona discharge nozzle at a relatively high pressure in comparison to the pressure inside the source body. A corona discharge is generated within an orifice of the nozzle. Energy from the discharge is transferred to the gas particles creating a corona discharge plasma of high-energy particles. As the plasma exits the nozzle orifice, the plasma is supersonically expanded inside the source body. A molecular beam skimmer defines and directs the plasma toward a substrate within a thin-film vacuum deposition chamber.

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