Beam sharing method and apparatus for ion implantation

Details Beam sharing method and apparatus for ion implantation Beam sharing method and apparatus for ion implantation

1981-09-28

1984-02-21

Anderson, Bruce C.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

250398, G01N 2300

Patent

active

044332475

ABSTRACT:
In an ion implantation system, wafer heating is reduced without significantly reducing wafer throughput. An ion beam is time shared between two or more target positions in the system. The ion beam repeatedly is deflected to each target position for a time interval which is small in comparison with the thermal time constant of the wafer as mounted in the system. During each time interval, the beam is scanned in a two-dimensional pattern over the surface area of the wafer. An integral number of scan patterns is completed during each time interval so as to insure uniform dosage of the wafer. It is preferred that the time interval be less than five percent of the thermal time constant of the wafer when mounted in the ion implantation system.

REFERENCES:
patent: 3778626 (1973-12-01), Robertson
patent: 4021675 (1977-05-01), Shifrin
patent: 4261762 (1981-04-01), King
patent: 4276477 (1981-06-01), Enge
patent: 4282924 (1981-08-01), Faretra
patent: 4283631 (1981-08-01), Turner

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