Radiant energy – Irradiation of objects or material – Ion or electron beam irradiation
Patent
1989-02-28
1990-07-24
Howell, Janice A.
Radiant energy
Irradiation of objects or material
Ion or electron beam irradiation
H01J 37317
Patent
active
049437283
ABSTRACT:
A defining aperture for an ion implanter in which wafers are implanted at high tilt angles, which aperture is configured to project a substantially circular beam pattern on the surface of the tilted wafer. One embodiment includes one or more movable aperture plates having elliptical apertures formed therein operating in conjunction with a fixed aperture plate having a circular aperture. Other embodiments include movable elliptical apertures, and a circular aperture rotatable about an axis perpendicular to the tilt axis of the wafer. Where an electron flood ring is used, one or more movable rings having elliptical apertures opening can be used.
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patent: 4794305 (1988-12-01), Matsukawa
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Improved VLSI Device Yields Through Control of Implant Angle by R. E. Kaim and J. F. M. Westendorp.
Analysis of Uniformity of Trench Side-Wall Doping By Sims by T. Takemoto, Y. Hirofuji, H. Iwasaki, N. Matsuo.
A New Isolation Method With Boron-Implanted Sidewalls For Controlling Narrow-Width Effect by G. Fuse, M. Fukumoto, A. Shinohara, S. Odanaka, M. Sasago, T. Ohzone.
The Application Of Self-Spinning Ion Implantation To VLSI Devices, Nissin Electric Company, Ltd.
New End Station For Rotation/Wide-Angle Ion Implanter Technique And Its Application To VLSI Devices, Nissin Electric Company, Ltd.
Dykstra Jerald P.
Ray Andrew M.
Eaton Corporation
Howell Janice A.
Nguyen Kiet T.
Sajovec F. M.
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