Beam lead formation method

Details Beam lead formation method Beam lead formation method

1974-03-29

1976-04-27

Tupman, W.

Metal working

Method of mechanical manufacture

Assembling or joining

29590, 29591, 357 69, B01J 1700

Patent

active

039524043

ABSTRACT:
The present disclosure is directed toward a method for making semiconductor devices having beam leads for electrical connections to external terminals. An undercoating metal film is deposited directly or via a protective film on a semiconductor wafer on which interconnections are formed together with electrode pad or contact areas. After subsequent deposition of an upper metal film, beam leads are formed in a desired pattern in a manner to contact with and extend from the electrode areas. The final step is to apply physical force to the semiconductor wafer such that the undercoating metal film serving also as a portion of the beam leads is forcibly spaced away from the major surface of the semiconductor wafer.

REFERENCES:
patent: 3112850 (1963-12-01), Garibotti
patent: 3706127 (1972-12-01), Oktay
patent: 3771219 (1973-11-01), Tuzi

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