Beam lead arrangement for microelectronic devices

Details Beam lead arrangement for microelectronic devices Beam lead arrangement for microelectronic devices

1977-01-24

1978-09-05

Hunt, Brooks H.

Stock material or miscellaneous articles

All metal or with adjacent metals

Plural layers discontinuously bonded

29621, 29630R, 29590, 174 52FP, 357 69, 428630, H01C 1728, H01L 2348, H01L 2350, H01L 2354

Patent

active

041121961

ABSTRACT:
An improved laminated beam lead for microelectronic devices, e.g., thin film resistors, integrated circuits or the like includes a first metal adhesion layer, e.g. tantalum nitride having disposed thereover a barrier metal such as palladium or platinum, and a bulk beam material, e.g., gold.
In accordance with one aspect of the present invention, a transverse discontinuity is formed in the barrier metalization layer such that normal forces applied to the end portion of the composite beam lead remote from the device chip will merely cause the beam lead to deform at the discontinuity rather than delaminating from the chip.

REFERENCES:
patent: 3699010 (1972-10-01), Nash
patent: 3751292 (1973-08-01), Kongable
patent: 3765970 (1973-10-01), Athanas et al.
patent: 3838984 (1974-10-01), Crane et al.
patent: 3942187 (1976-03-01), Gelsing et al.

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