Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Reexamination Certificate
2008-04-22
2008-04-22
Berman, Jack I. (Department: 2881)
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
C250S42300F, C250S427000, C250S492200, C250S493100, C250S281000, C250S443100, C250S442110, C315S111810
Reexamination Certificate
active
11290346
ABSTRACT:
One or more aspects of the present invention pertain to stabilizing the current or density of an ion beam within an ion implantation system by selectively adjusting a lone parameter of feed gas flow. Adjusting the gas flow does not necessitate adjustments to other operating parameters and thereby simplifies the stabilization process. This allows the beam current to be stabilized relatively quickly so that ion implantation can begin promptly and continue uninterrupted. This improves throughput while reducing associated implantation costs.
REFERENCES:
patent: 3496029 (1970-02-01), King et al.
patent: 3909305 (1975-09-01), Boroffka et al.
patent: 4659899 (1987-04-01), Welkie et al.
patent: 5306921 (1994-04-01), Tanaka et al.
patent: 5943594 (1999-08-01), Bailey et al.
patent: 6777686 (2004-08-01), Olson et al.
patent: 1 220 271 (2002-07-01), None
patent: 2 172 152 (1990-07-01), None
“SIMOX Wafer Fabrication by 100mA O+Implantation Using the UI-6000 Implanter”, K.Tokiguchi, H. Seki, T. Seki, J. Itou, Y. Higuchi, K. Mera, S. Tanaka, Y. Yamashita, I Hashimoto and A. Yoshikawa, IEEE, 2002, pp. 629-632.
“Characterization of a High Throughput Implanter for the Low Temperature Polysilicon AMLCD Industry”, Y.Shao, J. Blake, K. Chen, A. Brailove, M. King and M. Sato, IEEE, 1999, pp. 251-254.
International Search Report, Int'l Application No. PCT/US/2006/044817, Int'l Filing date Nov. 17, 2006, 3pgs.
Rathmell Robert D.
Vanderberg Bo H.
Axcelis Technologies Inc.
Berman Jack I.
Eschweiler & Associates LLC
Sahu Meenakshi S
LandOfFree
Beam current stabilization utilizing gas feed control loop does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Beam current stabilization utilizing gas feed control loop, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Beam current stabilization utilizing gas feed control loop will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3907016