Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Reexamination Certificate
2008-04-22
2008-04-22
Berman, Jack I. (Department: 2881)
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
C250S42300F, C250S427000, C250S492200, C250S493100, C250S281000, C250S443100, C250S442110, C315S111810
Reexamination Certificate
active
07361915
ABSTRACT:
One or more aspects of the present invention pertain to stabilizing the current or density of an ion beam within an ion implantation system by selectively adjusting a lone parameter of feed gas flow. Adjusting the gas flow does not necessitate adjustments to other operating parameters and thereby simplifies the stabilization process. This allows the beam current to be stabilized relatively quickly so that ion implantation can begin promptly and continue uninterrupted. This improves throughput while reducing associated implantation costs.
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Rathmell Robert D.
Vanderberg Bo H.
Axcelis Technologies Inc.
Berman Jack I.
Eschweiler & Associates LLC
Sahu Meenakshi S
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