Beam current stabilization utilizing gas feed control loop

Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices

Reexamination Certificate

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Details

C250S42300F, C250S427000, C250S492200, C250S493100, C250S281000, C250S443100, C250S442110, C315S111810

Reexamination Certificate

active

07361915

ABSTRACT:
One or more aspects of the present invention pertain to stabilizing the current or density of an ion beam within an ion implantation system by selectively adjusting a lone parameter of feed gas flow. Adjusting the gas flow does not necessitate adjustments to other operating parameters and thereby simplifies the stabilization process. This allows the beam current to be stabilized relatively quickly so that ion implantation can begin promptly and continue uninterrupted. This improves throughput while reducing associated implantation costs.

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“Characterization of a High Throughput Implanter for the Low Temperature Polysilicon AMLCD Industry”, Y.Shao, J. Blake, K. Chen, A. Brailove, M. King and M. Sato, IEEE, 1999, pp. 251-254.
International Search Report, Int'l Application No. PCT/US/2006/044817, Int'l Filing date Nov. 17, 2006, 3pgs.

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