Beam annealed silicide film on semiconductor substrate

Details Beam annealed silicide film on semiconductor substrate Beam annealed silicide film on semiconductor substrate

1984-08-28

1987-06-16

Chaudhuri, Olik

Metal working

Method of mechanical manufacture

Electrical device making

148DIG19, 148DIG90, 427 93, H01L 2144, H01L 21441

Patent

active

046727400

ABSTRACT:
A semiconductor device having contact windows between an aluminum or aluminum-alloy wiring layer and a diffused region in a semiconductor substrate, in which the contacts are formed by using a barrier film on a refractory metal silicide between the wiring layer and the diffused region. The barrier film comprising the refactory metal and silicon is beam annealed for a short period of time such as, 10 seconds or less, so that adverse effects of the barrier film can be prevented while an excellent electrical or ohmic contact between the wiring layer and the diffused layer can be obtained.

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