Coherent light generators – Particular active media – Semiconductor
Patent
1996-10-07
1998-10-06
Bovernick, Rodney B.
Coherent light generators
Particular active media
Semiconductor
372 46, H01S 319
Patent
active
058188592
ABSTRACT:
A II-VI compound semiconductor laser diode includes a plurality of II-VI semiconductor layers forming a pn junction supported by a single crystal GaAs semiconductor substrate. The layers formed in the pn junction include a first cladding layer of a first conductivity type, a second cladding layer of a second conductivity type, and at least a first guiding layer between the first and second cladding layers. A quantum well active layer is positioned within the pn junction. Electrical energy is coupled to the laser diode by first and second electrodes. Various layers in the laser diode are formed using Be.
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Baude Paul F.
Haase Michael A.
Miller Thomas J.
Pashley Michael D.
Bovernick Rodney B.
Champlin Judson K.
Minnesota Mining and Manufacturing Company
Phan Luong-Quyen T.
Sherman Lorraine R.
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