Electrical generator or motor structure – Non-dynamoelectric – Piezoelectric elements and devices
Reexamination Certificate
2008-04-01
2010-06-15
SanMartin, J. (Department: 2837)
Electrical generator or motor structure
Non-dynamoelectric
Piezoelectric elements and devices
C310S320000
Reexamination Certificate
active
07737612
ABSTRACT:
A piezoelectric resonator includes a multi-layer top electrode configured such that a top most layer protects the underlying layers from subsequent etching, thereby preventing etch undercut of the top-most layer. In one embodiment, the multi-layer top electrode is configured as a bi-layer, so that the upper layer of the bi-layer stack protects all sides of the underlying layer from subsequent etch process steps. In an alternative embodiment, at least the perimeter of a multi-layer top electrode is completely covered with overlapping interconnect metal.
REFERENCES:
patent: 4692653 (1987-09-01), Kushida et al.
patent: 5589810 (1996-12-01), Fung
patent: 5692279 (1997-12-01), Mang et al.
patent: 5844347 (1998-12-01), Takayama et al.
patent: 6089701 (2000-07-01), Hashizume et al.
patent: 6291931 (2001-09-01), Lakin
patent: 6307447 (2001-10-01), Barber et al.
patent: 6500678 (2002-12-01), Aggarwal et al.
patent: 6937114 (2005-08-01), Furukawa et al.
patent: 7042136 (2006-05-01), Kita et al.
patent: 7148610 (2006-12-01), Jacot et al.
patent: 7220600 (2007-05-01), Summerfelt et al.
patent: 7276836 (2007-10-01), Umeda et al.
patent: 7323805 (2008-01-01), Sano et al.
patent: 7358831 (2008-04-01), Larson et al.
patent: 7436102 (2008-10-01), Fujii et al.
patent: 7463117 (2008-12-01), Ohara et al.
patent: 7466537 (2008-12-01), Nakayama
patent: 7482737 (2009-01-01), Yamada et al.
patent: 2004/0115881 (2004-06-01), Choi et al.
patent: 2006/0255693 (2006-11-01), Nishihara et al.
patent: 2007/0152540 (2007-07-01), Fujii et al.
patent: 2008/0055369 (2008-03-01), Saito
patent: 2008/0157632 (2008-07-01), Williams
patent: 2004-135163 (2004-04-01), None
Tapani Makkonen, Toumas Pensala, Juha Vartiainen, Jouni V. Knuuttila, Jyrki Kaitila, Martti M. Salomaa, “Estimating Materials Parameters in Thin-Film BAW Resoantors Using Measured Dispersion Curves,” Jan. 2004, pp. 42-51, IEEE, vol. 51., No. 1.
R. Aigner, J. Ella, H-J. Elbrecht, W. Nessler, S. Marksteiner, “Advancement of MEMS into RF-Filter Applications,”2002, pp. 1-4, IEEE.
Kenneth M. Lakin, Gerald R. Klein, Kevin T. McCarron, “High-Q Microwave Acoustic Resonators and Filters,”Dec. 1993, pp. 2139-2146, IEEE Transaction on Microwave Theory and Techniques, vol. 41 No. 12.
K. M. Lakin, “Thin Film Resonators and High Frequency Filters,” Jun. 1, 2001, pp. 1-18, TFR Technologies, Inc.
Non-Final Office Action dated Dec. 2, 2008, U.S. Appl. No. 11/422,375, filed May 25, 2006.
Notice of Allowance dated Jun. 15, 2009, U.S. Appl. No. 11/422,375, filed May 25, 2006.
Bouche Guillaume
Hamou Haim Ben
Wall Ralph N.
Haverstock & Owens LLP
Maxim Integrated Products Inc.
SanMartin J.
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