Electricity: electrical systems and devices – Electrostatic capacitors – Variable
Patent
1985-04-01
1986-04-29
Griffin, Donald
Electricity: electrical systems and devices
Electrostatic capacitors
Variable
29 2541, 73724, 427 79, H01G 700, G01L 912, B05D 512
Patent
active
045861099
ABSTRACT:
Silicon capacitive pressure sensors are produced by a batch-process method, comprising the steps of: (1) providing first and second wafers of conductive silicon; (2) oxidizing a surface of each wafer with a layer of silicon dioxide; (3) removing a predefined area of the silicon dioxide layer from a first one of the wafers, leaving an exposed surface of unoxidized silicon in the predefined area; (4) superimposing the second wafer onto the first wafer so that the silicon dioxide layer of the second wafer is in contact with the silicon dioxide layer of the first wafer; (5) fusing the two wafers together at their contacting silicon dioxide layers; (6) metallizing selected areas of the outer surfaces of the two wafers to form electrical contacts; and (7) cutting the wafers into individual pressure sensors. Each of the individual sensors so formed has a pair of opposed conductive silicon plates separated by a dielectric gap formed between the predefined unoxidized area of the first wafer and the opposed silicon dioxide layer of the second wafer. At least one of the plates is formed to be deflectable into the gap in response to the application of pressure to its outer surface.
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Marks Eugene A.
Peters Arthur J.
Becker William G.
Bourns Instruments, Inc.
Griffin Donald
Klein Howard J.
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