Basic cell of gate array device

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Details

357 41, 357 45, H01L 2702, H01L 2710, H01L 2715, H01L 2300

Patent

active

050310186

ABSTRACT:
A basic cell of a gate array device comprises a substrate, a plurality of source/drain diffusion regions being formed in the substrate, at least one gate electrode being located between the adjacent source/drain diffusion regions, a substrate contact region being formed in the substrate and being located in the vicinity of the source/drain diffusion regions, and an insulation film being provided on the source/drain regions and the gate electrode and being provided with contact hole forming regions at which contact holes are to be formed so as to form a plurality of interconnecting channels for making an electric connection between desired regions. Each of the source/drain diffusion regions adjacent to the substrate contact region has a narrower portion located under one interconnecting channel specifically for making one substrate contact and a wider portion located under the other interconnecting channels.

REFERENCES:
patent: 4430583 (1984-02-01), Shoji
patent: 4622567 (1986-11-01), Pals et al.
patent: 4672584 (1987-06-01), Tsuji et al.
patent: 4701777 (1987-10-01), Takayama et al.
patent: 4760035 (1988-07-01), Pfleiderer et al.

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