Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Combined with field effect transistor
Patent
1992-07-23
1993-03-30
James, Andrew J.
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Combined with field effect transistor
257146, 257335, 257365, 257402, H01L 2974, H01L 2910, H01L 2978
Patent
active
051986876
ABSTRACT:
A base resistance controlled thyristor with single-polarity and dual-polarity turn-on and turn-off control includes a turn-off device provided between the second base region and the cathode of a thyristor. Controlled turn-off is provided by either a near-zero positive bias or a negative bias being applied to the turn-off device. In the preferred embodiment, the turn-off device is a P-channel depletion-mode MOSFET in the surface of a semiconductor substrate. Accordingly, an accumulation-layer channel can be formed between the second base region and the cathode in response to a negative bias. Alternatively, if single-polarity control is desired, the P-type channel is provided to turn-off the device in response to a near-zero positive bias. In either type of operation, however, advantages are obtained over conventional turn-off devices wherein inversion-layer channels are used.
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James Andrew J.
Ngo Ngan Van
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