Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Combined with field effect transistor
Patent
1992-12-14
1993-08-31
Ngo, Ngan
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Combined with field effect transistor
257146, 257154, 257155, 257163, 257173, 257370, 257566, 257577, H01L 2974, H01L 2902, H01L 2972
Patent
active
052411940
ABSTRACT:
A base resistance controlled thyristor with integrated single-polarity gate control includes a thyristor having an anode region, a first base region, a second base region on the first base region and a cathode region contacting the second base region and defining a P-N junction therewith. For providing gated turn-off control, a depletion-mode field effect transistor is provided on the second base region and is separated therefrom by an insulating region. In particular, an insulating region, such as a buried dielectric layer, is provided on the second base region and the depletion-mode field effect transistor is formed thereon. The depletion-mode field effect transistor is electrically connected between the cathode contact and the second base region and provides a direct electrical connection therebetween in response to a turn-off bias signal which is preferably a zero or near zero bias. The insulating region, on the other hand, prevents direct electrical conduction between the second base region and the source of the depletion-mode transistor. The insulating region can be formed as a buried dielectric layer during processing and is preferably selected from the group consisting of SiO.sub.2, Si.sub.3 N.sub.4, Al.sub.2 O.sub.3 and MgAl.sub.2 O.sub. 4.
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Ngo Ngan
North Carolina State University at Raleigh
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