Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – With extended latchup current level
Patent
1995-09-26
1998-08-11
Fahmy, Wael
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
With extended latchup current level
257162, 257165, H01L 2974, H01L 31111
Patent
active
057930660
ABSTRACT:
An insulated gate base resistance controlled thyristor with a high controllable current capability is described. The device has a high density of MOS-channels modulating the resistance of the base region of the NPN transistor of the thyristor structure. The higher MOS channel density is achieved by contacting directly only the N.sup.++ emitter and the P.sup.+ cells (and not the P base region of the NPN transistor) to the cathode electrode. The N.sup.++ cells (i.e. the P base regions each containing an N.sup.++ emitter) and the P.sup.+ cells are connected in certain regions under the MOS gate by a P.sup.- region to provide a higher base resistance when a positive bias is applied to the MOS gate, thereby facilitating latching of the thyristor. The added MOS gate controlled base resistance between cells allows the P base cells to be designed with smaller dimensions for high maximum controllable current without affecting latch-up capability. The device is preferably provided in a checkerboard style cellular layout.
REFERENCES:
patent: 4258377 (1981-03-01), Miyata et al.
patent: 4954869 (1990-09-01), Bauer
patent: 5281833 (1992-03-01), Ueno
Fahmy Wael
International Rectifier Corporation
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