Base layer structure covering a hole of decreasing diameter in a

Details Base layer structure covering a hole of decreasing diameter in a Base layer structure covering a hole of decreasing diameter in a

1998-04-17

2000-04-18

Hardy, David B.

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257774, H01L 2940

Patent

active

060518804

ABSTRACT:
The present invention provides a base layer structure formed in a hole having an upper portion which has a larger diameter than other portions thereof. The hole is formed in an insulation layer in a semiconductor device. The base layer structure comprises a base layer which extends on at least a part of the upper portion of the hole and over at least a part of the insulation layer in the vicinity of a top of the hole, wherein the base layer extending on the upper portion has an effective thickness in an elevational direction, which is thicker than a thickness of the base layer over the insulation film and also thicker than a critical thickness which allows that at least a part of the base layer on the upper portion of the hole remains after an anisotropic etching process, whilst the base layer having extended over the insulation layer is etched by the anisotropic etching process.

REFERENCES:
patent: 4656732 (1987-04-01), Teng et al.
patent: 4782380 (1988-11-01), Shankar et al.
patent: 5444020 (1995-08-01), Lee et al.
patent: 5514911 (1996-05-01), Kim
patent: 5530294 (1996-06-01), Kim
patent: 5841196 (1998-11-01), Gupta et al.

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