Base drive circuit

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

Patent

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Details

307255, 307300, H03K 1760, H03K 100

Patent

active

041785215

ABSTRACT:
A direct-drive circuit for an inductively-loaded power switching transistor minimizes bias power drain by providing initial base current through a turn-on control transistor and then providing base drive current for the remainder of the power transistor's conduction interval by means of a diode coupled in series with a transformer winding regeneratively coupled to the collector-emitter current path of the power transistor. The turn-on control transistor is held off during this remaining conduction interval thereby reducing bias power drain. For power transistor turn-off, a complementary pair of control switches diverts base current drive and clamps the power transistor base to ground potential. The non-ideal turn-off characteristic of the diode is advantageously used to apply additional reverse potential across the base-emitter junction of the power transistor to effect carrier sweep-out for fast turn-off action. At the completion of power transistor turn-off, the complementary control switch pair is primed to eliminate the effects of any spurious noise potential appearing at the power transistor base resulting in improved noise margin for the non-conductive state.

REFERENCES:
patent: 3852620 (1974-12-01), Milberger et al.
patent: 3999086 (1976-12-01), Ekelund

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