Base cell for semi-custom circuit with merged technology

Details Base cell for semi-custom circuit with merged technology Base cell for semi-custom circuit with merged technology

1991-03-28

1992-04-21

Hudspeth, David

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307446, 357 45, H03K 19177

Patent

active

051071479

ABSTRACT:
A BiCMOS gate array base is disclosed which is capable of simultaneously implementing a BiCMOS gate and/or a multitude of CMOS gates. The cell has symmetry about 1 axis, with the bipolar devices in the center and equally accessible for interconnect by two CMOS sections. The cell allows half-cell macro circuit blocks to be placed into the base cell in an independent and flexible fashion. The same macro can be placed in either CMOS section because of the mirror symmetry. The base cell can be divided into 2 units of macro placement. The number of devices in the CMOS section is variable. This cell architecture can be extended to other mixed technologies.

REFERENCES:
patent: 4682202 (1987-07-01), Tanizawa
patent: 4827368 (1989-05-01), Suzuki et al.

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