Base ballasting

Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Bipolar transistor

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Details

257580, 257582, 257542, 257543, H01L 2972

Patent

active

053212797

ABSTRACT:
Generally, and in one form of the invention a semiconductor device is presented comprising: a transistor comprising an emitter finger and a base finger; and a ballast impedance connected to the base finger. Other devices and methods are also disclosed.

REFERENCES:
patent: 3766449 (1973-10-01), Bruchez
patent: 3977020 (1976-08-01), Enzlin et al.
patent: 3990092 (1976-11-01), Yoshimura
patent: 4417265 (1983-11-01), Murkland
patent: 4686557 (1987-08-01), Mahrla
patent: 4725876 (1988-02-01), Kishi
patent: 5111269 (1992-05-01), Tsugaru
patent: 5132764 (1992-07-01), Raktaroglu
Wang et al., "A 4 GHz High Power Transistor-Design and Reliability," Conference: 1973 IEEE G-MTT International Microwave Symposium (4-6 Jun. 1973), Digest of Technical Papers, Boulder, Colo. U.S.A., pp. 236-238.

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