Barrier regions for image sensors

Details Barrier regions for image sensors Barrier regions for image sensors

2006-02-21

2006-02-21

Wilson, Allan R. (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

C257S443000, C257S445000

Reexamination Certificate

active

07002231

ABSTRACT:
Embodiments of the invention provide a barrier region for isolating devices of an image sensor. The barrier region comprises a charge accumulation region of a particular conductivity type in a substrate electrically connected to a voltage source terminal. The charge accumulation region is adjacent to at least one pixel cell of a pixel array. The charge accumulation region accumulates charge and prevents charge transference from a pixel cell or peripheral circuitry on one side of the barrier region to a pixel cell on another side of the barrier region.

REFERENCES:
patent: 3786264 (1974-01-01), Ferro et al.
patent: 3959646 (1976-05-01), DE Cremoux
patent: 4227098 (1980-10-01), Brown et al.
patent: 5013904 (1991-05-01), Muro
patent: 6721005 (2004-04-01), Higuchi
patent: 6818930 (2004-11-01), Mouli et al.

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